Center for Correlated Electron Systems


Electrolyte-Gated for Novel Physical Properties and Neuromorphic Applications

July 20, 2020l Hit 820
Date : July 28, 2020 15:00 ~ 16:30
Speaker : Dr. Heyi Huang (Institute of Physics, Chinese Academy of Sciences)
Location :

In this talk, we will first demonstrate the working principle of the electrolyte-gated transistor with oxygen ions. We investigated the electrolyte gating induced phase transformation between SrCoO2.5 and SrCoO3δ, combining in situ X-ray diffraction (XRD), scanning transmission electron microscopy (STEM), electron energy-loss spectra (EELS), X-ray absorption spectra (XAS). The change in conductance amongst the two phases ( SrCoO2.5 ?  SrCoO3δ), along with their temperature dependences, confirms that  SrCoO3δ is a good metal while SrCoO2.5 is insulators.

And then, we realized the electrolyte-gated transistor to emulate the functions of a biological synapse. The emulation of synapses is important to realize efficient artificial-neuromorphic computers. Based on controlling the channel conductance via the insertion and extraction of O2 ions through electrolyte gating, we realized the nonvolatile multilevel memory states, and emulated important synaptic functions such as the synaptic long-term potentiation (LTP), long-term depression (LTD), synaptic spike-timing-dependent plasticity (STDP), and spiking logic operations. These results provide an alternative avenue for future neuromorphic devices via electrolyte-gated transistors with oxygen ions.

[1] Advanced Functional Materials, 29, 1902702 (2019).

[2] Advanced Materials, 30, 1801548 (2018).



Host : Prof. Tae Won Noh